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DH081N03/DH081N03F/DH081N03IDH081N03E/DH081N03B/DH081N03D60A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR =8.1mDS(on) (TYP)standard.13 SI =60AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDSTO-220C TO-220F TO-2623 Applications Power switching applications Inverter management system Electric tools Automotive electronicsTO-263 TO-252B TO-251B4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)RatingParameter Symbol UnitsDH081N DH081N03I DH081N03B DH08103 DH081N03

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 dh081n03 dh081n03f dh081n03i dh081n03e dh081n03b dh081n03d.pdf Проектирование, MOSFET, Мощность

 dh081n03 dh081n03f dh081n03i dh081n03e dh081n03b dh081n03d.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 dh081n03 dh081n03f dh081n03i dh081n03e dh081n03b dh081n03d.pdf База данных, Инновации, ИМС, Транзисторы