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DHB90N03B17/DHD90N03B1790A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 4.0mDS(on) (TYP)standard.13 SI = 90AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Power switching applications DC-DC convertersTO-252B TO-251B Synchronous Rectifier Inverter management system Electric tools4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)RatingParameter Symbol UnitsDHB90N03B17 DHD90N03B17Drian-to-Source Voltage V 30 VDSSGate-to-Source Voltage V