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DSU023N10N3 100V/2m/281A N-MOSFET Features Key ParametersVDS 100V Advanced SGT2 silicon technology utilized Extremely low on-resistance RDS(on) RDS(on)typ. 2mID 281A Low reverse transfer capacitances 100% single pulse avalanche energy test Vth 3VCiss@10V 12750pF 100% VDS test Pb-Free plating / Halogen-Free / RoHS compliant Qgd 24.3nCApplications Motor Control and Drive Charge/Discharge for Battery Management System Synchronous Rectifier for SMPSTOLLMarking & Packing InformationPart # Package Marking Tube/Reel Qty(pcs)DSU023N10N3 TOLL DSU023N10N3 Reel 1800/boxRev 1.0 Pg 1/7 DONGHAI SemiconductorDSU023N10N3 100V/2m/281A N-MOSFET Absolute Maximum RatingsParameter Symbol Value UnitDrain-source voltage VDS 100 VGate-Source voltage VGS 20 VContinuous drain currentID ATC = 25