Скачать даташит для 2sa1213y-g:

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless otherwise noted) 0.020(0.52) 0.023(0.58) Symbol 0.013(0.32) 0.016(0.40) Parameter Value Unit Collector-Base voltage 0.060(1.50) VCBO -50 V TYP. Collector-Emitter voltage 0.118(3.00) VCEO -50 V TYP. Emitter-Base voltage VEBO -5 V 0.063(1.60) Continuous current IC -2 A 0.055(1.40) Collector power dissipation PC 500 mW Thermal resistance from R JA 250 C/W 0.017(0.44) 0.047(1.20) junction to ambient 0.014(0.35) 0.035(0.90) Junction temperature TJ 150 C Dimensions in inches