Скачать даташит для mmbt3906-hf:

General Purpose Transistor MMBT3906-HF (PNP) RoHS Device Halogen Free Features SOT-23 -Epitaxial planar die construction 0.119 (3.00) 0.110 (2.80) -As complementary type, the NPN 3 transistor MMBT3906-HF is recommended 0.056 (1.40) 0.047 (1.20) 1 2 0.079 (2.00) 0.006 (0.15) Collector 0.003 (0.08) 0.071 (1.80) 3 0.041 (1.05) 0.100 (2.55) 0.035 (0.90) 0.089 (2.25) 1 Base 0.004 (0.10) max 0.020 (0.50) 0.020 (0.50) 0.012 (0.30) 0.012 (0.30) 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings (at TA=25 C unless otherwise noted) Symbol Typ Parameter Min Max Unit Collector-Base voltage -40 V VCBO Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector current-Continuous IC -0.2 A Collector dissipatioin PC 0.3 W Storage temperature and junction temperature TSTG , TJ +150 C -55 Electrical Characteristics (