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Spec. No. C586E3 Issued Date 2011.04.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 400V RDS(ON) 0.47 (typ.) MTN10N40E3 ID 10A Description The MTN10N40E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Switching Mode Power Supply Symbol Outline MTN10N40E3 TO-220 G Gate D Drain S Source G D S MTN10N40E3 CYStek Product Specification Spec. No. C586E3 Issued Date 2011.04.18 CYStech

 

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 mtn10n40e3.pdf Проектирование, MOSFET, Мощность

 mtn10n40e3.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mtn10n40e3.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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