Скачать даташит для mtn10n65ea:
Spec. No. C725EA Issued Date 2010.02.25 CYStech Electronics Corp. Revised Date 2010.12.29 Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 700V @Tj=150 RDS(ON) 0.85 MTN10N65EA ID 10A Description The MTN10N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-82 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150 Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Power Factor Correction LCD TV Power Full and Half Bridge Power Symbol Outline MTN10N65EA SOT-82 G Gate G D Drain D S S So
Ключевые слова - ALL TRANSISTORS DATASHEET
mtn10n65ea.pdf Проектирование, MOSFET, Мощность
mtn10n65ea.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
mtn10n65ea.pdf База данных, Инновации, ИМС, Транзисторы
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet



