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August 2014 FCP110N65F N-Channel SuperFET II FRFET MOSFET 650 V, 35 A, 110 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 98 nC) and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET Applications