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August 2010 FDMS0308CS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanced Package and Silicon combination for low rDS(on) rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Desktop Bottom Top Pin 1 D G S 5 4 S S

 

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 fdms0308cs.pdf Проектирование, MOSFET, Мощность

 fdms0308cs.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fdms0308cs.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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