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August 2010 FGPF4536 360V, PDP IGBT Features General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of Low saturation voltage VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are High input impedance essential. Fast switching RoHS compliant Application PDP System TO-220F G C E (Retractable) Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 360 V VGES Gate to Emitter Voltage 30 V @ TC = 25oC220 A IC pulse(1)* Pulsed Collector Current Maximum Power Dissipation @ TC = 25oC 28.4 W PD Maximum Power Dissipation @ TC = 100oC11.4 W o TJ Operating Junction Temperature -55 to +150 C o Tstg Storage Temperature Range -55 to +150 C Maximum Lead Temp. for solderi