Скачать даташит для fqd5n50tf_fqu5n50tu:

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. D D G D-PAK I-PAK G S FQD Series G FQU Series D S S AbsoIute Maximum Ratings

Ключевые слова - ALL TRANSISTORS DATASHEET

 fqd5n50tf fqu5n50tu.pdf Проектирование, MOSFET, Мощность

 fqd5n50tf fqu5n50tu.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 fqd5n50tf fqu5n50tu.pdf База данных, Инновации, ИМС, Транзисторы