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IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.155 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 100 V Continuous Drain Current (TC=25 C) 8.4 ID A Continuous Drain Current (TC=100 C) 5.3 1 IDM Drain Current-Pulsed O 34 A + VGS Gate-to-Source Voltage _ 0 V 2 EAS Single Pulsed Avalanche Energy 141 mJ O IAR Avalanche Current 1 8.4 A O EAR Repetitive Avalanche Energy 1 3.2 mJ O 3 dv/dt Peak Diode Recovery dv/dt O 6.5 V/ns * Total Power Dissipation (TA=25 ) 2.5 W C PD Total Power