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March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit rated 10us @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.2 V @ IC = 15A the applications such as motor control, UPS and general High Input Impedance inverters where short-circuit ruggedness is required. CO-PAK, IGBT with FRD trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C C G G TO-3P E E G C E Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Description SGH15N60RUFD Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage 20 V Collector Curr

 

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 sgh15n60rufd.pdf Проектирование, MOSFET, Мощность

 sgh15n60rufd.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 sgh15n60rufd.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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