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2SK3691-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25 C unless otherwise specified) Equivalent circuit schematic Item Symbol Ratings Unit Remarks Drain(D) Drain-source voltage VDS 600 V VDSX 600 V VGS=-30V Continuous Drain Current ID 4.5 A Pulsed Drain Current ID(puls] 18 A Gate-Source Voltage VGS 30 V Gate(G) Maximum Avalanche current IAR 4.5 A Note *1 Source(S) Non-Repetitive EAS 261.1 mJ Note *2 Note *1 Tch

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2sk3691-01mr.pdf Проектирование, MOSFET, Мощность

 2sk3691-01mr.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sk3691-01mr.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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