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2SD667, 2SD667A Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD667 2SD667A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base voltage VEBO 55V Collector current IC 11A Collector peak current iC(peak) 22A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 50 to +150 C Electrical Characteristics (Ta = 25 C) 2SD667 2SD667A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 120 120 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 80 100 V IC = 1 mA, RBE = breakdown