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Spec. No. HE6517 HI-SINCERITY Issued Date 1995.02.11 Revised Date 2004.08.09 MICROELECTRONICS CORP. Page No. 1/5 HSC945 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ........................................................................................................................... -50 +150 C Junction Temperature ..................................................................................................................... 150 C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25 C) ............................................................................................................... 250 mW Maximum Voltages and Currents (TA=25 C) VCBO Co

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