Скачать даташит для 2n3772:

isc Silicon NPN Power Transistor 2N3772 DESCRIPTION Excellent Safe Operating Area High DC Current Gain-h =15(Min)@I = 10A FE C Low Saturation Voltage- V )= 1.4V(Max)@ I = 10A CE(sat C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEX V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 20 A C I Collector Current-Peak 30 A CM I Base Current-Continuous 5 A B I Base Current-Peak 15 A BM P Collector Power Dissipation @T =25 150 W C C T Junction Temperature 200 J T Storage Temperature -65 200