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isc N-Channel MOSFET Transistor 2SK3561 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-Source Voltage-Continuous 30 V GS I Drain Current-Continuous 8 A D I Drain Current-Single Pluse 32 A DM P Total Dissipation @T =25 40 W D C Max. Operating Junction Temperature -55 150 T J Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 3.13 th j-c 1 isc website ww