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isc Silicon NPN Power Transistor 3DK501D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min.) (BR)CEO DC Current Gain h = 20(Min.)@I = 10A FE C Collector-Emitter Saturation Voltage- V )= 1.2V(Max)@ I = 10A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 450 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 20 A C P Collector Power Dissipation 100 W C T Junction Temperature 150 J Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 1.25 /W th j-c 1