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isc N-Channel MOSFET Transistor FDD6670S FEATURES Drain Current I =64A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =59m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS I Drain Current-Continuous;@Tc=25 64 A D I Drain Current-Single Pulsed 100 A DM P Total Dissipation 70 W D T Operating Junction Temperature -55 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.8 1 isc website www.iscsemi.com isc &