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INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF540NPBF FEATURES Drain Current I = 33A@ T =25 D C Static Drain-Source On-Resistance R = 44m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS Drain Current-Continuous@ T =25 33 C I A D Drain Current-continuous@ T =100 23 C I Drain Current-Single Plused 110 A DM P Total Dissipation @T =25 130 W D C Max. Operating Junction Temperature -55 175 T j T Storage Temperature -55 175 stg