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SMBT2222A/MMBT2222A NPN Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type 1 SMBT2907A / MMBT2907A (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1P SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 75 Collector-base voltage VCBO 6 Emitter-base voltage VEBO 600 mA Collector current IC 330 mW Total power dissipation- Ptot TS 77 C 150 C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit K/W Junction - soldering point1) RthJS 220 1 For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2011-08-19 1 SMBT2222A/MMBT2222A Electrical Characteristics at