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SMBT3906...MMBT3906 PNP Silicon Switching Transistors High DC current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U Two (galvanic) internal isolated transistor with good matching in one package Complementary types SMBT3904...MMBT3904 (NPN) SMBT3906S/ U for orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT3906/ MMBT3906 s2A 1=B 2=E 3=C - - - SOT23 SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 6 Emitter-base voltage VEBO 200 mA Collector current IC mW Total power dissipation- Ptot TS 71 C, SOT23, MMBT390

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 smbt3906 mmbt3906 smbt3906s smbt3906u.pdf Проектирование, MOSFET, Мощность

 smbt3906 mmbt3906 smbt3906s smbt3906u.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 smbt3906 mmbt3906 smbt3906s smbt3906u.pdf База данных, Инновации, ИМС, Транзисторы