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PD - 97451AUTOMOTIVE GRADEAUIRFR3710ZHEXFET Power MOSFETFeaturesDl Advanced Process Technology V(BR)DSS100Vl Ultra Low On-ResistanceRDS(on) max.18ml 175C Operating TemperatureGl Fast SwitchingID (Silicon Limited)56Al Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)42Al Lead-Free, RoHS Compliantl Automotive Qualified *Description DSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingStechniques to achieve extremely low on-resistance perGsilicon area. Additional features of this design are aD-Pak175C junction operating temperature, fast switchingAUIRFR3710Zspeed and improved repetitive avalanche rating . Thesefeatures combine to make this design an extremelyefficient and reliable device for use in Automotive appli-cations and a wide variety
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auirfr3710z.pdf Проектирование, MOSFET, Мощность
auirfr3710z.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
auirfr3710z.pdf База данных, Инновации, ИМС, Транзисторы



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