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RoHS IRF3710 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) DESCRIPTION The Nell IRF3710 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications G such as switching regulators, convertors, motor drivers TO-220AB DS and drivers for high power bipolar switching transistors (IRF3710A) requiring high speed and low gate drive power. These transistors can be operated directly from D (Drain) integrated circuits. FEATURES G RDS(ON) = 0.023 @ VGS = 10V (Gate) Ultra low gate charge(130nC max.) Low reverse transfer capacitance S (Source) (CRSS = 72pF typical) Fast switc
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irf3710a.pdf Проектирование, MOSFET, Мощность
irf3710a.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irf3710a.pdf База данных, Инновации, ИМС, Транзисторы
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