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PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = -100V l 150 C Operating Temperature l Fast Switching RDS(on) = 60m l Repetitive Avalanche Allowed up to Tjmax G l Some Parameters are Different from IRF5210S/L ID = -38A S l P-Channel l Lead-Free D D Description Features of this design are a 150 C junction operating temperature, fast switching speed and S S improved repetitive avalanche rating . These fea- D D G tures combine to make this design an extremely G efficient and reliable device for use in a wide D2Pak TO-262 variety of other applications. IRF5210LPbF IRF5210SPbF GDS Gate Drain Source Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C -38 A Continuous Drain Current, VGS @ -10V ID @ TC = 100 C -24 Continuous Drain Current, VGS @ -10V IDM -140