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PD - 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a widevariety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levelsto approximately 50 watts. The low