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PD -95190IRG4PH50UDPbF UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 2.78V New IGBT design provides tighterG parameter distribution and higher efficiency than previous generations @VGE = 15V, IC = 24AE IGBT co-packaged with HEXFREDTM ultrafast,n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-FreeBenefits Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics requireTO-247ACless/no snubbingAbsolute Maximum Ratings Para