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PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (ON) Temperature CoefficientEVCE(on) typ. = 1.70V Tight Parameter Distributionn-channel Lead Free PackageCBenefits C High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due toE ECCLow VCE (ON) and Low Switching LossesGG Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel OperationTO-247AC TO-247ADIRGP4066DPbF IRGP4066D-EPbFG C EGate Collector E
Ключевые слова - ALL TRANSISTORS DATASHEET
irgp4066dpbf irgp4066d-epbf.pdf Проектирование, MOSFET, Мощность
irgp4066dpbf irgp4066d-epbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
irgp4066dpbf irgp4066d-epbf.pdf База данных, Инновации, ИМС, Транзисторы



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