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irgp4068dpbf_irgp4068d-epbfirgp4068dpbf_irgp4068d-epbf

PD - 97250CIRGP4068DPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSIRGP4068D-EPbFFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low Switching Losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficientEVCE(on) typ. = 1.65V Ultra-low VF Hyperfast Dioden-channel Tight parameter distribution Lead Free PackageBenefitsCC Device optimized for induction heating and soft switching applications High Efficiency due to Low VCE(on), Low Switching Lossesand Ultra-low VF Rugged transient Performance for increased reliabilityEECCGG Excellent Current sharing in par

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 irgp4068dpbf irgp4068d-epbf.pdf Проектирование, MOSFET, Мощность

 irgp4068dpbf irgp4068d-epbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irgp4068dpbf irgp4068d-epbf.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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