Скачать даташит для irgp4750d:

IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100 C tSC 5.5 s, TJ(max) = 175 C E E G C C G G VCE(ON) typ. = 1.7V @ IC = 35A E IRGP4750DPbF IRGP4750D EPbF n-channel Applications TO 247AC TO 247AD Industrial Motor Drive G C E UPS Gate Collector Emitter Solar Inverters Welding Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5 s Short Circuit SOA Rugged Transient Performance Square RBSOA Maximum Junction Temperature 175 C Increased Reliability Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Lead-Free, RoHs compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number