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Approved(Not Released)PD - TBDIRLB4132PbFHEXFET Power MOSFETApplicationsl Optimized for UPS/Inverter ApplicationsVDSS RDS(on) maxQgl Low Voltage Power Tools30V 3.5m 36nCBenefitsDl Best in Class Performance for UPS/InverterApplicationsl Very Low RDS(on) at 4.5V VGSSDl Ultra-Low Gate ImpedanceGl Fully Characterized Avalanche VoltageTO-220ABand Currentl Lead-FreeGDSGate Drain SourceAbsolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 30VVGS Gate-to-Source Voltage 20ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 150 Continuous Drain Current, VGS @ 10V (Silicon Limited) 100ID @ TC = 100CAID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 78IDM Pulsed Drain Current 620PD @TC = 25C Maximum Power Dissipation 140WPD @TC = 100C Maximum Power Di
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irlb4132pbf.pdf Проектирование, MOSFET, Мощность
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