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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 BC556/BC557/BC558 TRANSISTOR (PNP) FEATURES High Voltage 1. COLLECTOR Complement to BC546,BC547,BC548 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit BC556 -80 VCBO Collector-Base Voltage BC557 -50 V BC558 -30 BC556 -65 VCEO Collector-Emitter Voltage BC557 -45 V BC558 -30 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.1 A PC Collector Power Dissipation 625 mW R JA Thermal Resistance from Junction to Ambient 200 /W Tj Junction Temperature 150 Storage Temperature Tstg -55 +150 A,May,2012 B,Feb,2013 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit BC556 -80 Collector-base BC557 V(BR)CBO

 

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 bc556 bc557 bc558.pdf Проектирование, MOSFET, Мощность

 bc556 bc557 bc558.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bc556 bc557 bc558.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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