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60V, 61A, 4.1m Dual N-channel Power SGT MOSFETJMSH0606PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.7 V 100% Vds TestedID(@VGS=10V) 61 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 QualifiedApplications Load Switch PWM ApplicationPDFN5X6-8L-DSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice Marking MSL Form Package Reel(pcs)(pcs)JMSH0606PGDQ-13 H0606PDQ 1 Tape&Reel PDFN5x6-8L-D 5000 50000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Symbol Parameter Value UnitVDS Drain-to-Source Voltage 60 VVGS Gate-to-Source Voltage 20 VTC = 25 61CID Continuous Drain Current ATC = 100 43CIDM Refer to Fig.4 APulsed Drain Current (1)EAS 212 mJSin