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80V, 263A, 1.6m N-channel Power SGT MOSFETJMSH0802PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 263 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementTO-263 -3L Schematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JMSH0802PE-13 TO-263-3LSH0802P 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 80 VVGS Gate-to-Source Voltage 20 VTC = 25 263CIDContinuous Drain Current ATC = 100 166CIDM Refer to Fig.4 APulsed Drain Current (1)EAS 1765 mJSingle Pulsed Avalanche Ene

 

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 jmsh0802pe.pdf Проектирование, MOSFET, Мощность

 jmsh0802pe.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 jmsh0802pe.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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