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110V, 173A, 3.5m N-channel Power SGT MOSFETJMSH1103TEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 110 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 173 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.5 mWApplications Load Switch PWM Application Power ManagementDG STO-263-3L Top ViewSchematic DiagramPin AssignmentOrdering InformationPer CartonDevice PackageMarking MSL Form Reel(pcs)(pcs)JMSH1103TE TO-263-3LSH1103T 3 Tape&Reel 800 4000Absolute Maximum Ratings (@ TC = 25C unless otherwise specified)Parameter ValueSymbol UnitVDS Drain-to-Source Voltage 110 VVGS Gate-to-Source Voltage 20 VTC = 25 173CIDContinuous Drain Current ATC = 100 122CIDM Refer to Fig.4 APulsed Drain Current (1)EA

 

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 jmsh1103te.pdf Проектирование, MOSFET, Мощность

 jmsh1103te.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 jmsh1103te.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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