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JMSH2010BCJMSH2010BE200V 9.1mN-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS200 V Low Gate Charge, Qg VGS(th)_Typ3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 129 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC/DC & AC/DC (SR) Sub-systems Load Switching, Quick/Wireless Charging, Motor DrivingTO-220-3L Top ViewTO-263-3L Top ViewDDGG GDSSSOrdering InformationDevice Package # of Pins Marking MSL TJ (C) Media Quantity (pcs)JMSH2010BC-U TO-220-3L 3 SH2010B NA -55 to 175 Tube 50JMSH2010BE-13 TO-263-3L 3 SH2010B 1 -55 to 175 13-inch Reel 800Absolute Maximum Ratings (@ TA = 25C unless otherwise specifie