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SEMICONDUCTOR KN4400/4401 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C Complementary to KN4402/4403. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 60 V G 0.85 H 0.45 VCEO _ Collector-Emitter Voltage 40 V H J 14.00 + 0.50 K 0.55 MAX F F VEBO L 2.30 Emitter-Base Voltage 6 V M 0.45 MAX N 1.00 IC Collector Current 600 mA 1 2 3 PC Collector Power Dissipation 625 mW 1. EMITTER 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range TO-92 1996. 1. 28 Revision No 0 1/3 A J C L M KN4400/4401 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICEX VCE=35V, VEB(OFF)=0.4V Collector Cut-