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DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching 1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54TYP [2.54 0.20 ] [2.54 0.20 ] 1 GATE 2 DRAIN 3 SOURCE 10.00 0.20 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 (Package Limited) Tc=25 75 ID Continuous Drain Current (Silicon Limited) Tc=25 180 A Tc=100 120 Pulsed Drain Current IDM 710 Avalanche Curren IAR See Fig.12a, 12b, 15, 16 Repetitive Avalanche Energy EAR Single Pulse Avalanche Energy 330 mJ EAS Single Pulse A