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Preliminary-MEE4298K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4298K-G is a N-Channel enhancement mode power field RDS(ON) 8m @VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON) 11.5m @VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low RDS(ON) to minimize on state resistance and gate charge, and enhance Exceptional on-resistance and maximum DC current avalanche capability. These devices are particularly suited for capability medium voltage application such as charger, adapter, notebook computer power management and other lighting dimming powered APPLICATIONS Power Management circuits, and low in-line power loss that are needed in a very small Synchronous Rectification outline surface mount package. Load