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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB3N120E/DDesigner's Data SheetMTB3N120ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 3.0 AMPERES 1200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 5.0 OHMthan any existing surface mount package which allows it to be usedin applications that require the use of surface mount componentswith higher power and lower RDS(on) capabilities. This high voltageMOSFET uses an advanced termination scheme to provideenhanced voltageblocking capability without degrading perfor-mance over time. In addition, this advanced TMOS EFET isdesigned to withstand high energy in the avalanche and commuta-tion modes. This new energy efficient design also offers aDdrain