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Pb Free Product NCE75TD120BTP4 1200V, 75A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switching Positive temperature coefficient in V CE(sat) Very tight parameter distribution High ruggedness, temperature stable behavior Application Schematic diagram Inverters Motor drives Converter Package Marking and Ordering Information Device Device Package Device Marking NCE75TD120BTP4 TO-247P-4L NCE75TD120BTP4 TO-247P-4L Absolute Maximum Ratings (T =25 C unless otherwise noted) C Symbol Parameter Value Units V Collector-Emitter Voltage 1200 V CES V Gate- E
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nce75td120btp4.pdf Проектирование, MOSFET, Мощность
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