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NGD8201B Ignition IGBT, 20 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses www.onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 AMPS, 400 VOLTS Features Ideal for Coil-on-Plug Applications VCE(on) 3 1.8 V @ DPAK Package Offers Smaller Footprint for Increased Board Space IC = 10 A, VGE . 4.5 V Gate-Emitter ESD Protection C Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy G RG Per Area RGE Low Threshold Voltage Interfaces Power Loads to Logic or Microprocessor Dev