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NGTB20N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides and superior performance in demanding switching applications, and offers low on-state voltage with minimal switching loss. The IGBT is well http //onsemi.com suited for resonant or soft switching applications. 20 A, 1200 V Features VCEsat = 2.10 V Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Eoff = 0.45 mJ Optimized for Low Losses in IH Cooker Application C Reliable and Cost Effective Single Die Solution These are Pb-Free Devices Typical Applications Inductive Heating G Consumer Appliances Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector-emitter voltage @ TJ =