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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http //onsemi.com applications. 15 A, 600 V Features Low Saturation Voltage Resulting in Low Conduction Loss VCEsat = 1.5 V Low Switching Loss in Higher Frequency Applications 5 ms Short Circuit Capability C Excellent Current versus Package Size Performance Density This is a Pb-Free Device Typical Applications G White Goods Appliance Motor Control General Purpose Inverter E AC and DC Motor Control ABSOLUTE MAXIMUM RATINGS C Rating Symbol Value Unit Collector