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Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V 1.27 1.27 2.54 0.15 Peak collector current ICP 100 mA Collector current IC 50 mA 1 Emitter Collector power dissipation PC 300 mW 2 Collector EIAJ SC 72 Junction temperature Tj 150 C 3 Base New S Type Package Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 1 A Collector to emitter voltage VCEO IC = 100 A, IB = 0 150 V Emitter