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Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100 Silicon N Channel IGBT Rev.1.00 High Speed Power Switching Mar 11, 2011 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25 C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code PRSS0003AF-A) (Package name TO-220FL) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCES 600 V Gate to emitter voltage VGES 30 V Collector current Tc = 25 C IC 45 A Tc = 100 C IC 22 A Collector peak current ic(peak) Note1 90 A Collector dissipation PC Note2 35 W Junction to case thermal impedance j-c Note2 3.57 C/ W Junction temperature Tj 150