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RUH85120M-C N-Channel Advanced Power MOSFET Features Pin Description 85V/120A, G RDS (ON) =4m (Typ.)@VGS=10V S S RDS (ON) =5.5m (Typ.)@VGS=4.5V S D Ultra Low On-Resistance Fast Switching Speed DD 100% Avalanche Tested DD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications Synchronous Rectification for Flyback Converters PD Adaptors G Charger for Mobile S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 85 V VGSS Gate-Source Voltage 20 TJ Maximum Junction Temperature 150 C TSTG Storage Temperature Range -55 to 150 C IS Diode Continuous Forward Current TC=25 C 120 A Mounted on Large Heat Sink TC=25 C 480 A IDP 300 s Pulse Drain Current Tested