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Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Base 0.6 2 Collector 3 Emitter Specifications 5.45 5.45 SANYO TO-3PB ( ) 2SB817C Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)160 V Collector-to-Emitter Voltage VCEO (--)140 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)12 A Collector Current (Pulse) ICP (--)20 A 2.5 W Collector Dissipation PC Tc=25 C 120 W Junction Temperature Tj 150 C Storage Tem