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2n4416ac1a_2n4416ac1b_2n4416ac1c_2n4416ac1d2n4416ac1a_2n4416ac1b_2n4416ac1c_2n4416ac1d

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4416AC1 Low Noise, High Gain. Hermetic Surface Mounted Package. Designed For VHF/UHF Amplifiers, Oscillators And Mixers. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage -35V VGD Gate Drain Voltage -35V IG Gate Current 10mA PD TA = 25 C Total Power Dissipation at 300mW Derate Above 25 C 1.7mW/ C TJ Junction Temperature Range -65 to +200 C Tstg Storage Temperature Range -65 to +200 C THERMAL PROPERTIES (Each Device) Symbols Parameters Min. Typ. Max. Units R JA Thermal Resistance, Junction To Ambient 583 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is belie

 

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 2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf Проектирование, MOSFET, Мощность

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 2n4416ac1a 2n4416ac1b 2n4416ac1c 2n4416ac1d.pdf База данных, Инновации, ИМС, Транзисторы